منابع مشابه
Tunnelling spin current and spin diode behaviour in a bilayer system.
The coherent tunnelling spin current in the bilayer system with spin-orbit coupling is investigated. Based on the continuity-like equations, we discuss the definition of the tunnelling current and show that the overlaps between wavefunctions for different layers contribute to the tunnelling current. We study the linear response of the tunnelling spin current to an in-plane electric field in the...
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Reliability is one of the key issues for the application of Silicon carbide (SiC) diode in high power conversion systems. For instance, in high voltage direct current (HVDC) converters, the devices can be submitted to high voltage transients which yield to avalanche. This paper presents the experimental evaluation of SiC diodes submitted to avalanche, and shows that the energy dissipation in th...
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We report on the first implementation of a single photon avalanche diode (SPAD) in 130nm CMOS technology. The SPAD is fabricated as p+/nwell junction with octagonal shape. A guard ring of p-well around the p+ anode is used to prevent premature discharge. To investigate the dynamics of the new device, both active and passive quenching methods have been used. Single photon detection is achieved b...
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– The spin-spin correlation length and the static structure factor for bilayer antiferromagnets, such as YBa2Cu3O6, are calculated using field theoretical and numerical methods. It is shown that these quantities can be directly measured in neutron scattering experiments using energy integrated two-axis scan despite the strong intensity modulation perpendicular to the layers. Our calculations sh...
متن کاملQuantum Hall Spin Diode.
Double layer two-dimensional electron systems at high perpendicular magnetic field are used to realize magnetic tunnel junctions in which the electrons at the Fermi level in the two layers have either parallel or antiparallel spin magnetizations. In the antiparallel case the tunnel junction, at low temperatures, behaves as a nearly ideal spin diode. At elevated temperatures the diode character ...
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2015
ISSN: 2158-3226
DOI: 10.1063/1.4935262